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Active standard | Published: 31/12/2014
GB/T 13389-2014
Practice for conversion between resistivity and dopant density for boron-doped, phosphorus-doped, and arsenic-doped silicon
Available languages: English, Chinese
Available design: electronic design (pdf), Print design
from 802.80 USD
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Detail information
Designation: GB/T 13389-2014
Publication date: 31/12/2014
Pages: 0
Country: Chinese technical standard
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