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Active standard | Published: 28/12/2023
GB/T 43493.1-2023
Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 1: Classification of defects
Available languages: English, Chinese
Available design: electronic design (pdf), Print design
from 433.50 EUR
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Detail information
Designation: GB/T 43493.1-2023
Publication date: 28/12/2023
Pages: 0
Country: Chinese technical standard
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