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Active standard | Published: 28/08/2026
GB/T 48164.1-2026
Semiconductor devices—Reliability test method for silicon carbide metal-oxide semiconductor field effect transistors (SiC MOSFET)—Part 1: Test method for bias temperature instability
Available languages: English, Chinese
Available design: electronic design (pdf), Print design
Detail information
Designation: GB/T 48164.1-2026
Publication date: 28/08/2026
Pages: 0
Country: Chinese technical standard
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