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Active standard | Published: 28/08/2026
GB/T 48170-2026
Dynamic on-resistance test method guidelines for Gallium Nitride High Electron Mobility Transistor (GaN HEMT) based power conversion devices
Available languages: English, Chinese
Available design: electronic design (pdf), Print design
from 8 177.30 CZK
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Detail information
Designation: GB/T 48170-2026
Publication date: 28/08/2026
Pages: 0
Country: Chinese technical standard
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