Active standard | Published: 17/11/2022

IEC/TS 62607-6-16-ed.1.0

Nanomanufacturing - Key control characteristics - Part 6-16: Two-dimensional materials - Carrier concentration: Field effect transistor method

Available languages: English

Available design: electronic design (pdf), Print design, CD-ROM

from 234.90 USD show on eshop

Detail information

Designation: IEC/TS 62607-6-16-ed.1.0

Publication date: 17/11/2022

Pages: 0

Country: International technical standard

Where to buy?

You can buy at www.mystandards.biz

Anotation

IEC TS 62607:2022 establishes a standardized method to determine the key control characteristic

carrier concentration

for semiconducting two-dimensional materials by the

field effect transistor (FET) method.

For semiconducting two-dimensional materials, the carrier concentration is evaluated using a field effect transistor (FET) test by a measurement of the voltage shift obtained from transfer curve upon doping process. The FET test structure consists of three terminals of source, drain, and gate where voltage is applied to induce the transistor action. Transfer curves are obtained by measuring drain current while applying varied gate voltage and constant drain voltage with respect to the source which is grounded.

Popular Publishers

full catalog