Active standard | Published: 16/12/2025

IEC/TS 62876-3-4-ed.1.0

Nanomanufacturing - Reliability assessment - Part 3-4: Linearity of output characteristics for metal contacted 2D semiconductor devices

Available languages: English

Available design: electronic design (pdf), Print design, CD-ROM

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Detail information

Designation: IEC/TS 62876-3-4-ed.1.0

Publication date: 16/12/2025

Pages: 24

Country: International technical standard

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Anotation

IEC TS 62876-3-4:2025, which is a Technical Specification, establishes a standardized guideline to assess • reliability of metallic interfaces of Ohmic-contacted field-effect transistors (FETs) using 2D nano-materials by quantifying • linearity of current-voltage (I-V) output curves for devices with various materials combinations of van der Waals (vdW) interfaces. For metallic interfaces with 2D materials (eg. graphene, MoS2, MoTe2, WS2, WSe2, etc) and metals (eg. Ti, Cr, Au, Pd, In, Sb, etc), the reliability of Ohmic contact is quantified. For FETs consisting of 2D materials-based channels (eg. MoS2, MoTe2, WS2, WSe2, etc), the reliability of Ohmic contact when varying contacting metal, channel length, channel thickness, applied voltage, and surface treatment condition is quantified. The reliability of the metallic contacts is quantified from the linearity of I-V characteristics measured over extended time periods.

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