IEC 60749-17-ed.2.0

Detail information

Designation: IEC 60749-17-ed.2.0

Publication date: 28/03/2019

Pages: 0

Country: International technical standard

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Anotation

IEC 60749-17:2019 is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test. This edition includes the following significant technical changes with respect to the previous edition: updates to better align the test method with MIL-STD 883J, method 1017, including removal of restriction of use of the document, and a requirement to limit the total ionization dose; addition of a Bibliography, including US MIL- and ASTM standards relevant to this test method. L’IEC 60749-17:2019 est realise pour determiner la sensibilite des dispositifs a semiconducteurs a la degradation par perte d’energie non ionisante (NIEL, Non-Ionizing Energy Loss). L’essai decrit dans le present document s’applique aux circuits integres et aux dispositifs discrets a semiconducteurs, et est destine aux applications des domaines militaire et aerospatial. Il s’agit d’un essai destructif. Cette edition inclut les modifications techniques majeures suivantes par rapport a l’edition precedente: mises a jour afin de mieux aligner la methode d’essai avec la methode 1 017 du document MIL-STD 883J, comprenant la suppression des restrictions d’utilisation du document, et une exigence visant a limiter la dose ionisante totale; ajout d’une bibliographie, comprenant les normes US MIL- et ASTM correspondant a la presente methode d’essai.