Active standard | Published: 05/03/2015

IEC 62047-16-ed.1.0

Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods
(Dispositifs a semiconducteurs - Dispositifs microelectromecaniques - Partie 16: Methodes d´essai pour determiner les contraintes residuelles des films de MEMS - Methodes de la courbure de la plaquette et de deviation de poutre en porte-a-faux)

Available languages: English and French

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Detail information

Designation: IEC 62047-16-ed.1.0

Publication date: 05/03/2015

Pages: 21

Country: International technical standard

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Anotation

IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 µ to 10 µ in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods. LIEC 62047-16:2015 definit les methodes dessai permettant de mesurer les contraintes residuelles des films dont lepaisseur se situe dans la plage de 0,01 µ a 10 µ dans des structures fabriquees de microsystemes electromecaniques (MEMS) au moyen des methodes de la courbure de la plaquette ou de deviation de poutre en porte-a-faux.

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