Active standard | Published: 13/07/2011

IEC 62047-9-ed.1.0

Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
(Dispositifs a semiconducteurs - Dispositif microelectromecaniques - Partie 9: Mesure de la resistance de collage de deux plaquettes pour les MEMS)

Available languages: English and French

Available design: electronic design (pdf), Print design, CD-ROM

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Detail information

Designation: IEC 62047-9-ed.1.0

Publication date: 13/07/2011

Pages: 49

Country: International technical standard

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Anotation

IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters. The contents of the corrigendum of March 2012 have been included in this copy. La CEI 62047-9:2011 decrit une methode de mesure de la resistance de collage de deux plaquettes, le type de processus de liaison, par exemple le collage par fusion de deux plaquettes de silicium, le collage anodique dune plaquette de silicium et dune plaquette de verre, etc., et la taille de la structure applicable pendant le traitement ou lassemblage de systemes microelectromecaniques (MEMS). Lepaisseur de plaquette applicable est dans la gamme comprise entre 10 ohmm et plusieurs millimetres. Le contenu du corrigendum de mars 2012 a ete pris en consideration dans cet exemplaire.

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