Active standard | Published: 15/07/2020

IEC 62373-1-ed.1.0

Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
(Dispositifs a semiconducteurs - Essai de stabilite de temperature en polarisation pour transistors a effet de champ metal-oxyde-semiconducteur (MOSFET) - Partie 1: Essai rapide de BTI pour les MOSFET)

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Detail information

Designation: IEC 62373-1-ed.1.0

Publication date: 15/07/2020

Pages: 0

Country: International technical standard

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Anotation

IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs). This document also defines the terms pertaining to the conventional BTI test method. L’IEC 62373-1:2020 fournit la methode de mesure pour un essai rapide de BTI (instabilite en temperature sous polarisation) des transistors a effet de champ metal-oxyde-semiconducteurs (MOSFET) a base de silicium. Le present document definit egalement les termes relatifs a la methode d’essai de BTI conventionnelle.

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