Active standard | Published: 22/04/2010

IEC 62417-ed.1.0

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
(Dispositifs a semiconducteurs - Essais d´ions mobiles pour transistors a semiconducteurs a oxyde metallique a effet de champ (MOSFETs))

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Detail information

Designation: IEC 62417-ed.1.0

Publication date: 22/04/2010

Pages: 16

Country: International technical standard

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Anotation

IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors. La CEI 62417:2010 fournit une procedure dessai au niveau de la plaquette pour determiner la quantite de charge positive mobile a linterieur des couches doxyde dans les transistors a semiconducteur a oxyde metallique a effet de champ. Elle sapplique aux deux transistors a effets parasites et effets actifs. La charge mobile peut causer des degradations des dispositifs microelectroniques, par exemple en decalant la tension de seuil des MOSFETs ou par inversion de la base dans les transistors bipolaires.

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