Active standard | Published: 21/04/2022

IEC 63275-1-ed.1.0

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
(Dispositifs a semiconducteurs - Methode d’essai de fiabilite pour les transistors a effet de champ metal-oxyde-semiconducteurs discrets en carbure de silicium - Partie 1: Methode d’essai pour la mesure de la derive de la tension de seuil apres polarisation electrique en temperature)

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Detail information

Designation: IEC 63275-1-ed.1.0

Publication date: 21/04/2022

Pages: 0

Country: International technical standard

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Anotation

IEC 63275-1:2022 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h). L’IEC 63275-1:2022 donne une methode d’essai pour evaluer le decalage de la tension de seuil de grille des transistors a effet de champ metal-oxyde-semiconducteurs (MOSFET) de puissance en carbure de silicium (SiC) en utilisant un releve a temperature ambiante apres avoir applique une contrainte de tension grille-source positive continue a temperature elevee. La methode proposee accepte une certaine quantite de recouvrement en autorisant des decalages importants entre la contrainte et la mesure (jusqu’a 10 h).

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