IEC 63505-ed.1.0

Podrobné informácie

Označenie: IEC 63505-ed.1.0

Dátum vydania: 08.04.2025

Stránok: 0

Krajina: Medzinárodná technická norma

Kde kúpiť?

Môžete zakúpiť na eshop.normservis.sk

Anotácia

IEC 63505:2025 gives guidance on VT measurement methods and conditioning prior to VT testing in SiC power MOSFETs to reduce or eliminate the effect of the aforementioned hysteresis. The method is applicable for PBTI testing, NBTI and threshold voltage changes caused by switching events are excluded from the scope. SiC MOSFETs have threshold voltage hysteresis caused by transient trap effects, which impacts the evaluation of the actual the VT shift caused by stress tests such as bias temperature instabilities (BTI).