IEC/TS 62607-6-27-ed.1.0

Detailinformationen

Bezeichnung: IEC/TS 62607-6-27-ed.1.0

Ausgabedatum: 16.12.2025

Seiten: 19

Land: Internationale technische Norm

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Annotation

IEC TS 62607-6-27:2025, which is a Technical Specification, establishes a standardized method to determine the key control characteristic • field-effect mobility for semiconducting two-dimensional (2D) materials by the • field-effect transistor (FET) method. For two-dimensional semiconducting materials, the field-effect mobility is determined by fabricating a FET test structure and measuring the transconductance in a four-terminal configuration. - This method can be applied to layers of semiconducting two-dimensional materials, such as graphene, black phosphorus (BP), molybdenum disulfide (MoS2), molybdenum ditelluride (MoTe2), tungsten disulfide (WS2), and tungsten diselenide (WSe2). - The four-terminal configuration improves accuracy by eliminating parasitic effects from the probe contacts and cables