Active standard | Published: 16/12/2025

IEC/TS 62607-6-27-ed.1.0

Nanomanufacturing - Key control characteristics - Part 6-27: Graphene-related products - Field-effect mobility for layers of two-dimensional materials: field-effect transistor method

Available languages: English

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Detail information

Designation: IEC/TS 62607-6-27-ed.1.0

Publication date: 16/12/2025

Pages: 19

Country: International technical standard

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Anotation

IEC TS 62607-6-27:2025, which is a Technical Specification, establishes a standardized method to determine the key control characteristic • field-effect mobility for semiconducting two-dimensional (2D) materials by the • field-effect transistor (FET) method. For two-dimensional semiconducting materials, the field-effect mobility is determined by fabricating a FET test structure and measuring the transconductance in a four-terminal configuration. - This method can be applied to layers of semiconducting two-dimensional materials, such as graphene, black phosphorus (BP), molybdenum disulfide (MoS2), molybdenum ditelluride (MoTe2), tungsten disulfide (WS2), and tungsten diselenide (WSe2). - The four-terminal configuration improves accuracy by eliminating parasitic effects from the probe contacts and cables

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