Active standard | Published: 29/08/2016

IEC 62047-25-ed.1.0

Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area
(Dispositifs a semiconducteurs - Dispositifs microelectromecaniques - Partie 25: Technologie de fabrication de MEMS a base de silicium - Methode de mesure de la resistance a la traction-compression et au cisaillement d´une micro zone de brasure)

Available languages: English and French

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Detail information

Designation: IEC 62047-25-ed.1.0

Publication date: 29/08/2016

Pages: 45

Country: International technical standard

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Anotation

IEC 62047-25:2016 specifies the in-situ testing method to measure the bonding strength of micro bonding area which is fabricated by micromachining technologies used in silicon-based micro-electromechanical system (MEMS). This document is applicable to the in-situ pull-press and shearing strength measurement of the micro bonding area fabricated by microelectronic technology process and other micromachining technology. LIEC 62047-25:2016 specifie la methode dessai in situ pour mesurer la resistance de brasure dune microzone de brasure fabriquee par des technologies de micro-usinage utilisees dans un systeme microelectromecanique (MEMS) a base de silicium. Le present document sapplique a la mesure in situ de la resistance a la traction-compression et de la resistance au cisaillement dune microzone de brasure fabriquee par un processus microelectronique et dautres technologies de micro-usinage.

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