Aktívna norma | Vydaná: 29.08.2016

IEC 62047-25-ed.1.0

Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area
(Dispositifs a semiconducteurs - Dispositifs microelectromecaniques - Partie 25: Technologie de fabrication de MEMS a base de silicium - Methode de mesure de la resistance a la traction-compression et au cisaillement d´une micro zone de brasure)

Dostupné jazyky: Anglicky a francúzsky

Dostupné prevedenie: Elektronické PDF, Tlačené, CD-ROM

od 207.40 EUR zobraziť na eshopu

Podrobné informácie

Označenie: IEC 62047-25-ed.1.0

Dátum vydania: 29.08.2016

Stránok: 45

Krajina: Medzinárodná technická norma

Kde kúpiť?

Môžete zakúpiť na eshop.normservis.sk

Anotácia

IEC 62047-25:2016 specifies the in-situ testing method to measure the bonding strength of micro bonding area which is fabricated by micromachining technologies used in silicon-based micro-electromechanical system (MEMS). This document is applicable to the in-situ pull-press and shearing strength measurement of the micro bonding area fabricated by microelectronic technology process and other micromachining technology. LIEC 62047-25:2016 specifie la methode dessai in situ pour mesurer la resistance de brasure dune microzone de brasure fabriquee par des technologies de micro-usinage utilisees dans un systeme microelectromecanique (MEMS) a base de silicium. Le present document sapplique a la mesure in situ de la resistance a la traction-compression et de la resistance au cisaillement dune microzone de brasure fabriquee par un processus microelectronique et dautres technologies de micro-usinage.

Populárna vydavatelia

celý katalóg