Active standard | Published: 08/11/2010

ISO 12406:2010

Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of arsenic in silicon
(Analyse chimique des surfaces — Spectrométrie de masse des ions secondaires — Dosage de l´arsenic dans le silicium par profilage d´épaisseur)

Available languages: English

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Detail information

Designation: ISO 12406:2010

Publication date: 08/11/2010

Pages: 13

Country: International technical standard

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Anotation

Description / Abstract: ISO 12406:2010 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 x 1016 atoms/cm3 and 2,5 x 1021 atoms/cm3, and to crater depths of 50 nm or deeper.

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