Withdrawn | Published: 01/01/1992

ASTM F1153-92(1997) Withdrawn

Standard Test Method for Characterization of Metal-Oxide-Silicon (MOS) Structures by Capacitance-Voltage Measurements

Available languages: English

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Detail information

Designation: ASTM F1153-92(1997)

Publication date: 01/01/1992

Pages: 7

Note: Withdrawn

Country: American technical standard

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Keywords:
Average carrier concentration, Calibration-semiconductor instrumentation, Capacitance, Contamination-semiconductors, Defects-semiconductors, Dielectric constant (permittivity)/dissipation factor, Doping concentration, Electrical conductors-semiconductors, Electromagnetic interference, Equilibrium capacitance, Fixed oxide charge, Flatband capacitance/voltage, Interfacial tension, Inversion, Meal-oxide-silicon (MOS) structures, Minimum depletion layer capacitance

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