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Active standard | Published: 30/10/2009
GB/T 24580-2009
Test method for measuring boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry
Available languages: English, Chinese
Available design: electronic design (pdf), Print design
from 274.80 USD
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Detail information
Designation: GB/T 24580-2009
Publication date: 30/10/2009
Pages: 0
Country: Chinese technical standard
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