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Active standard | Published: 30/05/2025
GB/T 45716-2025
Semiconductor devices—Bias temperature instability test for metal-oxide semiconductor field-effect transistors (MOSFETs)
Available languages: English, Chinese
Available design: electronic design (pdf), Print design
from 352.80 USD
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Detail information
Designation: GB/T 45716-2025
Publication date: 30/05/2025
Pages: 0
Country: Chinese technical standard
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