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Active standard | Published: 30/01/2019
IEC 63068-1-ed.1.0
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
Available languages: English
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Detail information
Designation: IEC 63068-1-ed.1.0
Publication date: 30/01/2019
Pages: 23
Country: International technical standard
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IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.Popular Publishers
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