Active standard | Published: 21/04/2022

IEC 63284-ed.1.0

Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
(Dispositifs a semiconducteurs - Methode d’essai de fiabilite par la commutation sur charge inductive pour les transistors au nitrure de gallium)

Available languages: English and French

Available design: electronic design (pdf), Print design, CD-ROM

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Detail information

Designation: IEC 63284-ed.1.0

Publication date: 21/04/2022

Pages: 25

Country: International technical standard

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Anotation

IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress LIEC 63284:2022 couvre le protocole dexecution dune procedure de contrainte et une methode dessai correspondante, en vue devaluer la fiabilite des transistors de puissance a base de nitrure de gallium (GaN) par la commutation sur charge inductive, en particulier la contrainte de commutation dure.

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