JIS - Japanese technical standards

Testing methods of resistivity for germanium

Available languages: English, Japanese

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Testing method of resistivity for silicon crystals and silicon wafers with four-point probe

Available languages: Japanese

Available design: electronic design (pdf), Print design

Measurement of minority carrier life time in germanium by photoconductive decay method

Available languages: English, Japanese

Available design: electronic design (pdf), Print design

Measuring of minority-carrier lifetime in silicon single crystal by photoconductive decay method

Available languages: English, Japanese

Available design: electronic design (pdf), Print design

Determination of conductivity type in germanium by thermoelectromotive method

Available languages: English, Japanese

Available design: electronic design (pdf), Print design

Test methods of crystalline defects in silicon by preferential etch techniques

Available languages: English, Japanese

Available design: electronic design (pdf), Print design

Method of measurement of etch pit density of germanium crystal

Available languages: English, Japanese

Available design: electronic design (pdf), Print design

Methods of measurement of thickness, thickness variation and bow for silicon wafer

Available languages: Japanese

Available design: electronic design (pdf), Print design

Visual inspection for sliced and lapped silicon wafers

Available languages: Japanese

Available design: electronic design (pdf), Print design

Visual inspection for silicon wafers with specular surfaces

Available languages: Japanese

Available design: electronic design (pdf), Print design